acceptor ionの例文

例文

  1. Although compensation can be used to increase or decrease the number of donors or acceptors, the electron and hole mobility is always decreased by compensation because mobility is affected by the sum of the donor and acceptor ions.
  2. Thus, field penetration is arrested when the exposed negative acceptor ion charge balances the positive charge placed on the insulator surface : the depletion layer adjusts its depth enough to make the net negative acceptor ion charge balance the positive charge on the gate.
  3. Thus, field penetration is arrested when the exposed negative acceptor ion charge balances the positive charge placed on the insulator surface : the depletion layer adjusts its depth enough to make the net negative acceptor ion charge balance the positive charge on the gate.
  4. This ease-of-flow threshold also applies to p-channel " depletion-mode " devices, in which a positive voltage from gate to body / source creates a depletion layer by forcing the positively charged holes away from the gate-insulator / semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions.
  5. If we consider a p-type semiconductor ( with N _ A the density of acceptors, " p " the density of holes; " p = N A " in neutral bulk ), a positive voltage, V _ { GB }, from gate to body ( see figure ) creates a depletion layer by forcing the positively charged holes away from the gate-insulator / semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions ( see doping ( semiconductor ) ).

隣接する単語

  1. "acceptor doping"の例文
  2. "acceptor energy level"の例文
  3. "acceptor for honour"の例文
  4. "acceptor impurities"の例文
  5. "acceptor impurity"の例文
  6. "acceptor level"の例文
  7. "acceptor ligand"の例文
  8. "acceptor material"の例文
  9. "acceptor molecule"の例文
  10. "acceptor of energy"の例文
  11. "acceptor impurities"の例文
  12. "acceptor impurity"の例文
  13. "acceptor level"の例文
  14. "acceptor ligand"の例文
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